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AEGIS
SEMICONDUTORES LTDA.
A5A:3200.XX
VOLTAGE RATINGS
Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 175O C A5A:3200.24 A5A:3200.26 A5A:3200.28 A5A:3200.30 A5A:3200.32 A5A:3200.34 A5A:3200.36 A5A:3200.38 A5A:3200.40 A5A:3200.42 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 Max. VRSM , VR (V) Max. nonrep. peak reverse voltage
O TJ = 25 to 175 C
O TJ = -40 to 0 C
2400 2600 2800 3000 3200 3400 3600 3800 4000 4200
2500 2700 2900 3100 3300 3500 3700 3900 4100 4300
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 3200 100 5040 39.5 IFSM Max. Peak non-rep. surge current 43.0 kA 46.9 51.1 7064 I2t Max. I2t capability 7700 9917 10810 It
2 1/2
UNITS
O O
NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms Initial TJ = 175O C, rated VRRM applied after surge.
C C C
A
O
IF(RMS) Nom. RMS current
A
Initial TJ = 175O C, no voltage applied after surge.
Initial TJ = 175O C, rated VRRM applied after surge.
O
kA2s
t = 8.3 ms t = 10ms Initial TJ = 175 C, no voltage applied after surge.
2
Max. I t
2 1/2
capability
119000 4550
kA s
2 1/2
t = 8.3 ms Initial TJ = 175OC, no voltage applied after surge. for time tx = I t
2 1/2
It
*
1/2 tx .
(0.1 < tx < 10ms). -
F Mounting Force
N.m
AEGIS
SEMICONDUTORES LTDA.
A5A:3200.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. --------------------1590(56) "IR B-44" MAX. UNITS 1.89 1.186 1.139 0.109 0.145 225 0.011 0.012 0.012 0.006 --O O O
TEST CONDITIONS Initial TJ = 25 C, 50-60Hz half sine, I eak = 10053A. p
O TJ = 175 C O
V V mW mA
Av. power = V F(TO) * IF(AV) +rF * [IF(RMS) ]2 Use low values for I M < pIF(AV) F TJ = 175OC. Max. Rated VRRM
C/W DC operation, double side C/W 180O sine wave, double side C/W 120O rectangular wave, duble side
O
C/W Mtg. Surface smooth, flat and greased. -----
g(oz.) -
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C)
170 160 150 140 130
30
Maximum Allowable Case Temperature
170 160 150 140 130
30
120 110 100 90 0 500 1000 1500
60 90 120 180
120
60
110 100
90 120 180 DC
90 0 500 1000 1500 2000 2500 3000 3500 4000 4500
*Rectangular waveform
2000
2500
3000
3500
*Sinusoidal waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:3200.XX
Maximum Average Forward Power Loss
30
50000
40000
Maximum Average Forward Power Loss
30
Maximum Average Forward Power Loss (W)
40000
Maximum Average Forward Power Loss (W)
30000
30000
60
60
20000
90 120 180
20000
90 120 180
10000
10000
DC
0
*Sinusoidal waveform
0 0 1000 2000 3000 4000 5000
*Rectangular waveform
0
1000
2000
3000
4000
5000
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - Average Forward Power Loss Characteristics
Fig. 4 - Average Forward Power Loss Characteristics
100000
Forward Voltage Drop
0.1
Transient Thermal Impedance ZthJC
Transient Thermal Impedance ZthJC (C/W)
Instantaneous Forward Current (A)
10000
0.01
1000
1E-3
100
1E-4
125C
10 0.0 0.5
25C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1E-5 1E-3
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance ZthJC Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:3200.XX "B-44"
Fig. 7 - Outline Characteristics

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